| PART |
Description |
Maker |
| GS8170LW36C-333 GS8170LW36C-250 GS8170LW36C-250I G |
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
250MHz 256K x 72 18MB double late write sigmaRAM SRAM
300MHz 1M x 18 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| MCM63R918FC3.3R MCM63R918FC3.7R MCM63R836FC3.7R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
256K X 36 LATE-WRITE SRAM, 1.85 ns, PBGA119
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| MCM69R738CZP4.4R MCM69R820CZP4.4R MCM69R738CZP4R M |
4M Late Write 2.5 V I/O
|
Motorola, Inc
|
| MCM69R618 MCM69R536 |
1M Late Write HSTL
From old datasheet system
|
Motorola
|
| MCM63R736 |
4M Late Write HSTL
From old datasheet system
|
Motorola
|
| GS8170DW36AC-250 GS8170DW36AC-333 GS8170DW36AGC-25 |
18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
| MT59L128V36PB-4.5 |
128K X 36 LATE-WRITE SRAM, 2.25 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Cardinal Components, Inc.
|
| K7Z327285M |
512Kx72-Bit DLW(Double Late Write) RAM Data Sheet
|
Samsung Electronic
|
| HM64YLB36514-15 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
|
Renesas Electronics Corporation
|
| GS8330LW36C-250 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb Common I/O SigmaRAMs
36Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI[GSI Technology]
|
| CY7C1332AV25 CY7C1332AV25-200BGC CY7C1332AV25-200B |
18-Mbit (512K x 36/1Mbit x 18) Pipelined Register-Register Late Write
|
http://
Cypress Semiconductor
|
